RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | RN2965FE(TE85L,F) |
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Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | TRANS 2PNP PREBIAS 0.1W ES6 |
Datenblätte: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor-Typ | 2 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse | ES6 |
Serie | - |
Widerstand - Emitterbasis (R2) | 47kOhms |
Widerstand - Basis (R1) | 2.2kOhms |
Leistung - max | 100mW |
Verpackung / Gehäuse | SOT-563, SOT-666 |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Befestigungsart | Surface Mount |
Frequenz - Übergang | 200MHz |
DC Stromgewinn (HFE) (Min) @ Ic, VCE | 80 @ 10mA, 5V |
Strom - Collector Cutoff (Max) | 100nA (ICBO) |
Strom - Kollektor (Ic) (max) | 100mA |
Grundproduktnummer | RN2965 |
RN2965FE(TE85L,F) Einzelheiten PDF [English] | RN2965FE(TE85L,F) PDF - EN.pdf |
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![]() RN2965FE(TE85L,F)Toshiba Semiconductor and Storage |
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